Structural analysis of PLD grown 3C-SiC thin films on Si

被引：3

作者：

Gusev A.S. ^{[1
]}

Ryndya S.M. ^{[2
]}

Kargin N.I. ^{[1
]}

Averyanov D.V. ^{[3
]}

Pavlova E.P. ^{[1
]}

机构：

[1] National Research Nuclear University MEPhI, Moscow

[2] Karpov Institute of Physical Chemistry, Moscow

[3] National Research Centre “Kurchatov Institute,”, Moscow

来源：

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2014年 / 8卷 / 6期

关键词：

Root Mean Square; Select Area Electron Diffraction; High Resolution Transmission Electron Microscopy; Surface Investigation; Neutron Technique;

D O I：

10.1134/S1027451014060287

中图分类号：

学科分类号：

摘要：

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods. © 2014, Pleiades Publishing, Ltd.

引用

页码：1221 / 1229

页数：8

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