Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase

被引：0
|
作者：
Liu Y. [1 ]
Oyafuso F. [2 ]
Ng W.-C. [1 ]
Hess K. [1 ]
机构：
[1] Beckman Institute and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, 61801, IL
[2] High Performance Computing Group, Jet Propulsion Laboratory, Pasadena, 91109, CA
来源：
Journal of Computational Electronics | 2002年 / 1卷 / 1-2期
关键词：
diffusion capacitance; minilase; minority carriers; modulation response; numerical simulations; vertical cavity surface emitting lasers;
D O I：
10.1023/A:1020736416357
中图分类号：
学科分类号：
摘要：
Our numerical simulations of vertical cavity surface emitting lasers with Minilase demonstrate that a diffusion capacitance is induced by the minority carriers accumulated in the separate confinement regions. This diffusion capacitance is shown to be responsible for the over-damping of the modulation response and the reduction of the modulation bandwidth. It is also demonstrated that this diffusion capacitance is significantly suppressed by grading the separate confinement hetero-junctions (SCHs) or reducing the thickness of the SCHs. © 2002, Kluwer Academic Publishers.
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页码：119 / 122
页数：3
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