Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase

被引：0

作者：

Liu Y. ^{[1
]}

Oyafuso F. ^{[2
]}

Ng W.-C. ^{[1
]}

Hess K. ^{[1
]}

机构：

[1] Beckman Institute and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, 61801, IL

[2] High Performance Computing Group, Jet Propulsion Laboratory, Pasadena, 91109, CA

来源：

Journal of Computational Electronics | 2002年 / 1卷 / 1-2期

关键词：

diffusion capacitance; minilase; minority carriers; modulation response; numerical simulations; vertical cavity surface emitting lasers;

D O I：

10.1023/A:1020736416357

中图分类号：

学科分类号：

摘要：

Our numerical simulations of vertical cavity surface emitting lasers with Minilase demonstrate that a diffusion capacitance is induced by the minority carriers accumulated in the separate confinement regions. This diffusion capacitance is shown to be responsible for the over-damping of the modulation response and the reduction of the modulation bandwidth. It is also demonstrated that this diffusion capacitance is significantly suppressed by grading the separate confinement hetero-junctions (SCHs) or reducing the thickness of the SCHs. © 2002, Kluwer Academic Publishers.

引用

页码：119 / 122

页数：3

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