Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors

被引：0
|
作者：
H. Mosbahi
M. Gassoumi
A. Bchetnia
M.A. Zaidi
机构：
[1] Université de Sousse,Département Technologie et Ingénierie du Transport, Institut Supérieur du Transport et de la Logistique
[2] Unité de recherche Matériaux Avancés et Nanotechnologies,Départementde de Physique, Faculté des Sciences de Monastir
[3] Institut Supérieur des Sciences Appliquées et deTechnologie de,Department of Physics, College of Science
[4] Université de Monastir,undefined
[5] Qassim University,undefined
来源：
Silicon | 2022年 / 14卷
关键词：
AlGaN/GaN/Si HEMTs; Electrical conductance; Complex permittivity; modulus formalisms; Strain relaxation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This work investigated the electrical properties in AlGaN/GaN/Si HEMTsgrown by molecular beam epitaxy. The electrical behavior have been investigated using by electric permittivity, modulus formalism and conductance measurements. As has been found from electrical conductance, dispersive behavior is related to barrier inhomogeneity and deep trap in barrier layer. On the other hand, the strain relaxation of charge transport is studied both permittivity and electric modulus formalisms.
引用
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页码：7417 / 7422
页数：5
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