Snap-through transition of buckled graphene membranes for memcapacitor applications

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作者
Ruslan D. Yamaletdinov
Oleg V. Ivakhnenko
Olga V. Sedelnikova
Sergey N. Shevchenko
Yuriy V. Pershin
机构
[1] Nikolaev Institute of Inorganic Chemistry SB RAS,Department of Physics and Astronomy
[2] Novosibirsk State University,undefined
[3] B. I. Verkin Institute for Low Temperature Physics and Engineering,undefined
[4] V. N. Karazin Kharkov National University,undefined
[5] University of South Carolina,undefined
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摘要
Using computational and theoretical approaches, we investigate the snap-through transition of buckled graphene membranes. Our main interest is related to the possibility of using the buckled membrane as a plate of capacitor with memory (memcapacitor). For this purpose, we performed molecular-dynamics (MD) simulations and elasticity theory calculations of the up-to-down and down-to-up snap-through transitions for membranes of several sizes. We have obtained expressions for the threshold switching forces for both up-to-down and down-to-up transitions. Moreover, the up-to-down threshold switching force was calculated using the density functional theory (DFT). Our DFT results are in general agreement with MD and analytical theory findings. Our systematic approach can be used for the description of other structures, including nanomechanical and biological ones, experiencing the snap-through transition.
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