Design and fabrication of AlGaN/GaN high electron mobility transistors for biosensing applications

被引：2
|
作者：
Chinnamuthan Periasamy
Arathy Varghese
机构：
[1] Malaviya National Institute of Technology,Department of Electronics and Communication Engineering
来源：
CSI Transactions on ICT | 2019年 / 7卷 / 3期
关键词：
AlGaN/GaN HEMT; Analytical modeling; Simulation; Fabrication; Sensing; Transconductance; Label free detection;
D O I：
10.1007/s40012-019-00233-y
中图分类号：
学科分类号：
摘要：
Developing and optimizing FET platforms for label free bio molecule detection has gained huge interest in recent years. This paper presents a charge control model based sensitivity analysis of an optimized GaN HEMT for pH and biomarker detection. Analytical modeling, simulation and fabrication of the device have been discussed in this paper with focus on its sensing application. The overall aim is to enhance the sensitivity of AlGaN/GaN HEMT by epitaxial optimization and contact optimizations and deliver a highly efficient end product with desired sensitivity for bio/chemical detection.
引用
收藏
页码：187 / 190
页数：3
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