Output Power of a Semiconductor Laser in an External Cavity

被引：0
|
作者：
G. M. Hegde
Anand V. Ramamurthi
Shyam Kumar Das
A. Selvarajan
机构：
[1] Indian Institute of Science,Department of Electrical Communication Engineering
来源：
Journal of Optics | 1998年 / 27卷 / 4期
关键词：
D O I：
10.1007/BF03549345
中图分类号：
学科分类号：
摘要：
We present the processing procedure for obtaining efficient silicon nitride anti-reflection coating on semiconductor laser facet. Fabrication of an external cavity laser using a commer¬cially available semiconductor laser has been demonstrated. The output power of an exter¬nal cavity semiconductor laser has been studied experimentally for different feedback levels.
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页码：179 / 184
页数：5
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