Tuning Properties of External Cavity Violet Semiconductor Laser

被引:6
|
作者
Lv Xue-Qin [1 ,4 ]
Chen Shao-Wei [2 ]
Zhang Jiang-Yong [3 ]
Ying Lei-Ying [3 ]
Zhang Bao-Ping [3 ]
机构
[1] Xiamen Univ, Pen Tung Sah Inst Micronano Sci & Technol, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China
[4] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
QUANTUM-WELL; DIODE-LASER; BLUE LASER; OPERATION; FEEDBACK; FILTER; NM;
D O I
10.1088/0256-307X/30/7/074204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A tunable grating-coupled external cavity (EC) laser is realized by employing a GaN-based laser diode as the gain device. A tuning range of 4.47 nm from 403.82 to 408.29 nm is achieved. Detailed investigations reveal that the injection current strongly influences the performance of the EC laser. Below the free-running lasing threshold, EC laser works stably. While above the free-running lasing threshold, a Fabry-Perot (F-P) resonance peak in the emission spectrum and a smooth kink in the output power-injection current characteristic curve are observed, suggesting the competition between the inner F-P cavity resonance and EC resonance. Furthermore, the tuning range is found to be asymmetric and occurs predominantly on the longer wavelength side. This is interpreted in terms of the asymmetric gain distribution of GaN-based quantum well material.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Tuning Properties of External Cavity Violet Semiconductor Laser
    吕雪芹
    陈少伟
    张江勇
    应磊莹
    张保平
    [J]. Chinese Physics Letters., 2013, 30 (07) - 99
  • [2] Continuous tuning of an electrically tunable external-cavity semiconductor laser
    Kourogi, M
    Imai, K
    Widyatmoko, B
    Shimizu, T
    Ohtsu, M
    [J]. OPTICS LETTERS, 2000, 25 (16) : 1165 - 1167
  • [3] Wavelength tuning characteristics of a fabry-perot semiconductor laser with an external short cavity
    Masakatsu Okada
    Bijan Ghafary
    Hiroo Ukita
    [J]. Optical Review, 2001, 8 : 451 - 458
  • [4] Modelling and cavity optimisation of an external cavity semiconductor laser
    Feies, VI
    Montrosset, I
    [J]. SEMICONDUCTOR LASERS AND LASER DYNAMICS, 2004, 5452 : 291 - 302
  • [5] Statistical Properties of an External-Cavity Semiconductor Laser: Experiment and Theory
    Li, Nianqiang
    Pan, Wei
    Locquet, Alexandre
    Chizhevsky, V. N.
    Citrin, David S.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06) : 1 - 8
  • [6] Effect of external cavity length on the coherence properties in a multimode semiconductor laser
    Neethu, K.
    Sivaprakasam, S.
    [J]. PHYSICAL REVIEW A, 2022, 106 (04)
  • [7] Tuning mechanism for a MEMS external cavity laser
    Syms, RRA
    Lohmann, A
    [J]. 2002 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS, CONFERENCE DIGEST, 2002, : 183 - 184
  • [8] Electronic and thermal tuning of violet GaN coupled cavity laser
    Guziy, O.
    Grzanka, S.
    Leszczynski, M.
    Perlin, P.
    Salemink, H. W. M.
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES VII, 2012, 8262
  • [9] EXTERNAL-CAVITY SEMICONDUCTOR-LASER WITH 15-NM CONTINUOUS TUNING RANGE
    FAVRE, F
    LEGUEN, D
    SIMON, JC
    LANDOUSIES, B
    [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 795 - 796
  • [10] Study on external-cavity semiconductor laser
    金杰
    焦强
    李奕
    吕福云
    张光寅
    [J]. Chinese Optics Letters, 2003, (03) : 147 - 148