Channeling of Charged Particles Near the Surface of Semiconductors and Conducting Crystals

被引：0

作者：

V. I. Vysotskii

M. V. Vysotskyy

N. V. Maksyuta

机构：

[1] Taras Shevchenko National University of Kyiv,

来源：

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2021年 / 15卷

关键词：

channeling of charged particles; vector potential; axial channeling; planar channeling; nondissipative transport of beams of protons; electrons; and positrons;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：302 / 308

页数：6

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