Channeling of Charged Particles Near the Surface of Semiconductors and Conducting Crystals

被引：0
|
作者：
V. I. Vysotskii
M. V. Vysotskyy
N. V. Maksyuta
机构：
[1] Taras Shevchenko National University of Kyiv,
来源：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2021年 / 15卷
关键词：
channeling of charged particles; vector potential; axial channeling; planar channeling; nondissipative transport of beams of protons; electrons; and positrons;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：302 / 308
页数：6
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