Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

被引：0
|
作者：
R. Sudhaesanan
G. D. Vakerlis
N. H. Karam
机构：
[1] Spire Corporation,
[2] Spectrolab,undefined
[3] Inc.,undefined
来源：
Journal of Electronic Materials | 1997年 / 26卷
关键词：
CdZnTe; gamma-ray detector; HPB-CdZnTe; P-I-N;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report on the design, fabrication, and performance of CdZnTe gamma-ray detectors with a new P-I-N structure for spectroscopic applications. Highpressure and conventional vertical-Bridgman CdZnTe crystals were used for detector fabrication. P and n layers were deposited by thermal evaporation, and by optimizing the deposition conditions we achieved low leakage current (approximately 15 nA at 1000 V) and good performance. Spectral response data at high bias voltages showed improved energy resolution and peak-to-valley ratios for 241Am and 57Co compared to metal-semiconductor-metal detectors.
引用
收藏
页码：745 / 749
页数：4
相关论文
共 50 条
  • [1] Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design
    Sudharsanan, R
    Vakerlis, GD
    Karam, NH
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 745 - 749
  • [2] Performance of P-I-N CdZnTe radiation detectors and their unique advantages
    Sudharsanan, R
    Stenstrom, CC
    Bennett, P
    Vakerlis, GD
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 273 - 283
  • [3] Growth of CdZnTe and CdSeTe crystals for p-i-n radiation detectors
    Noda, D
    Aoki, T
    Nakanishi, Y
    Hatanaka, Y
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 1121 - 1124
  • [4] Performance of P-I-N CdZnTe radiation detectors and their unique advantages
    Sudharsanan, R
    Stenstrom, CC
    Bennett, P
    Vakerlis, GD
    SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 : 245 - 255
  • [5] Fabrication and performance of p-i-n CdTe radiation detectors
    Niraula, M
    Mochizuki, D
    Aoki, T
    Tomita, Y
    Nihashi, T
    Hatanaka, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 436 (1-2): : 132 - 137
  • [6] High performance p-i-n CdTe and CdZnTe detectors
    Petersburg Nuclear Physics Institute, 188350, Gatchina, St. Petersburg, Russia
    不详
    Nucl Instrum Methods Phys Res Sect A, 1 (58-65):
  • [7] High performance p-i-n CdTe and CdZnTe detectors
    Khusainov, AK
    Dudin, AL
    Ilves, AG
    Morozov, VF
    Pustovoit, AK
    Arlt, RD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 428 (01): : 58 - 65
  • [8] Performance of a high resolution CdTe and CdZnTe P-I-N detectors
    Khusainov, A
    Arlt, R
    Siffert, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2): : 245 - 251
  • [9] Fabrication of CdTe detectors in a new p-i-n design for gamma-ray spectroscopy
    Niraula, M
    Mochizuki, D
    Aoki, T
    Tomita, Y
    Nihashi, T
    Hatanaka, Y
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS, 1999, 3768 : 212 - 220
  • [10] Performance of a high resolution CdTe and CdZnTe P-I-N detectors
    Khusainov, A.
    Arlt, R.
    Siffert, P.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996, 380 (1-2) : 245 - 251
12345