High performance p-i-n CdTe and CdZnTe detectors

被引：18
|
作者：
Khusainov, AK [1 ]
Dudin, AL
Ilves, AG
Morozov, VF
Pustovoit, AK
Arlt, RD
机构：
[1] Petersburg Nucl Phys Inst, St Petersburg 188350, Russia
[2] Int Atom Energy Agcy, A-1400 Vienna, Austria
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 428卷 / 01期
关键词：
semiconductors; detectors; gamma quantum; X-ray; spectrum;
D O I：
10.1016/S0168-9002(98)01580-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30- - 35 degrees C cooling (by a Peltier cooler of 15 x 15 x 10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm(3) are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm(3). The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：58 / 65
页数：8
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