Growth of CdZnTe and CdSeTe crystals for p-i-n radiation detectors

被引：13
|
作者：
Noda, D
Aoki, T
Nakanishi, Y
Hatanaka, Y
机构：
[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan
[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷
关键词：
CdZnTe; p-i-n diode; remote plasma-enhanced MOCVD; low-temperature growth;
D O I：
10.1016/S0022-0248(00)00286-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-energy radiation detectors being operated at room temperature have been extensively studied on the bulk CdZnTe. Metal organic chemical vapor deposition (MOCVD) technique has been intensively investigated in the low substrate temperature of epitaxial film growth. Hydrogen radicals generated by inductively coupled RF remote plasma are introduced into the reaction region with source materials. These epitaxial growth processes are carried out at a low substrate temperature below 200 degrees C. The results obtained suggest that the remote plasma-enhanced MOCVD method can be one of the promising methods for CdZnTe-CdSeTe epitaxial growth. These growths are proposed for fabrication of the high-energy radiation detector. Using this technique, p-type CdZnTe layer and n-type CdSeTe epitaxial layer are formed on intrinsic CdZnTe substrate to fowl p-i-n diode. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1121 / 1124
页数：4
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