Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp

被引:0
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作者
Peng Zhang
Yuan Wang
Xing Zhang
XiaoHua Ma
Yue Hao
机构
[1] Xidian University,Key Laboratory of Wide Band
[2] Peking University,Gap Semiconductor Materials and Devices School of Microelectronics
来源
关键词
electrostatic discharge (ESD); SCR; latch-up immunity; holding voltage; power supply clamp; high voltage;
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摘要
Due to latch-up issue, the main problem of silicon-controlled rectifier (SCR) for power supply clamps in on-chip ESD protection is its inherent low holding voltage, especially in high-voltage applications. In this paper, we proposed a MOS-inside SCR (MISCR) showing nearly no snapback character and good ESD robustness, which is qualified for on-chip power clamp ESD protection. The stacked device achieves a series of triggering and holding voltage by altering the stacking number, which can also be used for the high voltage ESD power supply clamp applications.
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页码:1 / 6
页数:5
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