Charged Device Model (CDM) ESD Challenges for Laterally Diffused nMOS (nLDMOS) Silicon Controlled Rectifier (SCR) Devices for High-Voltage Applications in Standard Low-Voltage CMOS Technology

被引：0

作者：

Griffoni, A. ^{[1
]}

Chen, S. -H. ^{[1
]}

Thijs, S.

Linten, D.

Scholz, M. ^{[2
]}

Groeseneken, G. ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[2] VU Brussels, Dept Elect Engn, B-1005 Brussels, Belgium

来源：

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The turn-on behavior of high-voltage-tolerant nLDMOS SCRs is investigated during CDM ESD events. An early failure occurs because of gate-oxide damage. A device optimization is proposed, which improves the CDM ESD robustness up to 2.7x, unchanging the HBM ESD robustness.

引用

页数：4

共 5 条

[1] Novel silicon-controlled rectifier (SCR) for high-voltage electrostatic discharge (ESD) applications
Liu, Zhiwei
Liou, Juin J.
Vinson, Jim
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (07) : 753 - 755
[2] Comparison Between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications
Dai, Chia-Tsen
Ker, Ming-Dou
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 798 - 802
[3] Lateral SCR devices with low-voltage high-current triggering characteristics for output ESD protection in submicron CMOS technology
Ker, MD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 849 - 860
[4] Investigation of Human-Body-Model and Machine-Model ESD Robustness on Stacked Low-Voltage Field-Oxide Devices for High-Voltage Applications
Huang, Yi-Jie
Ker, Ming-Dou
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (08) : 3193 - 3198
[5] Novel Diode-Triggered Silicon-Controlled Rectifier (DTSCR) for High-Temperature Low-Voltage Electrostatic Discharge (ESD) Applications
Guo Junxiong
Liu JiZhi
Tian Rui
Zhao Liu
Liu Zhiwei
[J]. 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,

← 1 →