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Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp
被引:0
|作者:
Peng Zhang
Yuan Wang
Xing Zhang
XiaoHua Ma
Yue Hao
机构:
[1] Xidian University,Key Laboratory of Wide Band
[2] Peking University,Gap Semiconductor Materials and Devices School of Microelectronics
来源:
关键词:
electrostatic discharge (ESD);
SCR;
latch-up immunity;
holding voltage;
power supply clamp;
high voltage;
D O I:
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学科分类号:
摘要:
Due to latch-up issue, the main problem of silicon-controlled rectifier (SCR) for power supply clamps in on-chip ESD protection is its inherent low holding voltage, especially in high-voltage applications. In this paper, we proposed a MOS-inside SCR (MISCR) showing nearly no snapback character and good ESD robustness, which is qualified for on-chip power clamp ESD protection. The stacked device achieves a series of triggering and holding voltage by altering the stacking number, which can also be used for the high voltage ESD power supply clamp applications.
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页码:1 / 6
页数:5
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