On the preparation of CuInSe2 thin films via two‒stage selenization

被引：1

作者：

Gadjiev T.M. ^{[1
]}

Gadjieva R.M. ^{[1
]}

Kallaev S.N. ^{[1
]}

Aliev A.R. ^{[1
]}

Aliev M.A. ^{[1
]}

机构：

[1] Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala

来源：

Journal of Surface Investigation | 2016年 / 10卷 / 06期

关键词：

chemical analysis; microinclusions; morphology; selenization; structure;

D O I：

10.1134/S1027451016040273

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A two-stage selenization method for preparing CuInSe2 thin films in a carrier-gas (nitrogen) flow is developed. The dependences between the morphology and structure of CuInSe2 thin films and the selenization temperature are studied via electron microscopy and X-ray diffraction analysis. It is demonstrated that the film incorporates copper and indium selenides in the temperature range 300°C ≤ T < 400°C and a stoichiometric film with ordered chalcopyrite is formed at Т = 400°С. The possible mechanism whereby a CuInSe2 thin film is generated with the participation of selenization centers, namely, Cu2Se and In2Se3 grains, is discussed. © 2016, Pleiades Publishing, Ltd.

引用

页码：1197 / 1201

页数：4

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