Preparation of CuInSe2 thin films by chemical spray pyrolysis

被引:41
|
作者
Shirakata, S [1 ]
Murakami, T [1 ]
Kariya, T [1 ]
Isomura, S [1 ]
机构
[1] KOCHI UNIV,FAC SCI,KOCHI 780,JAPAN
关键词
CuInSe2 thin film; chemical spray pyrolysis; chalcopyrite semiconductors; CuInSe2/CdS heterojunction;
D O I
10.1143/JJAP.35.191
中图分类号
O59 [应用物理学];
学科分类号
摘要
CuInSe2 thin films have been prepared by chemical spray pyrolysis (CSP) on glass substrate from the ethanol aqueous solution containing CuCl2, InCl3 and N,N-dimethylselenourea. Properlies of the CuInSe2 films (electrical, structural, optical absorption and morphological properties) have been systematically studied in terms of substrate temperature (T-s), pH and the ion ratio (Cu/In) of the spray solution. Good chalcopyrite CuInSe2 films with large grains have been grown using the neutralized spray solution (pH = 4) at the growth temperature of 360 degrees C. On the other hand, low values of T-s, pH and Cu/In led to the production of sphalerite films.
引用
收藏
页码:191 / 199
页数:9
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