Preparation of CuInSe2 thin films by chemical spray pyrolysis

被引：41

作者：

Shirakata, S ^{[1
]}

Murakami, T ^{[1
]}

Kariya, T ^{[1
]}

Isomura, S ^{[1
]}

机构：

[1] KOCHI UNIV,FAC SCI,KOCHI 780,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 1A期

关键词：

CuInSe2 thin film; chemical spray pyrolysis; chalcopyrite semiconductors; CuInSe2/CdS heterojunction;

D O I：

10.1143/JJAP.35.191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInSe2 thin films have been prepared by chemical spray pyrolysis (CSP) on glass substrate from the ethanol aqueous solution containing CuCl2, InCl3 and N,N-dimethylselenourea. Properlies of the CuInSe2 films (electrical, structural, optical absorption and morphological properties) have been systematically studied in terms of substrate temperature (T-s), pH and the ion ratio (Cu/In) of the spray solution. Good chalcopyrite CuInSe2 films with large grains have been grown using the neutralized spray solution (pH = 4) at the growth temperature of 360 degrees C. On the other hand, low values of T-s, pH and Cu/In led to the production of sphalerite films.

引用

页码：191 / 199

页数：9

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