Raman spectra of CuInSe2 thin films prepared by chemical spray pyrolysis

被引:33
|
作者
Shirakata, S [1 ]
Kubo, H [1 ]
Hamaguchi, C [1 ]
Isomura, S [1 ]
机构
[1] OSAKA UNIV, FAC ENGN, SUITA, OSAKA 565, JAPAN
关键词
CuInSe2 thin film; chemical spray pyrolysis; chalcopyrite semiconductors; Raman spectroscopy;
D O I
10.1143/JJAP.36.L1394
中图分类号
O59 [应用物理学];
学科分类号
摘要
Raman spectra have been investigated for CuInSe2 polycrystalline thin films prepared by chemical spray pyrolysis. The A(1) mode Raman peak at 174 cm(-1), the dominant peak in CuInSe2 with a chalcopyrite structure, and a peak at 182 cm(-1) have been observed. The A(1) mode peak is dominant for Cu-rich films and stoichiometric films deposited at high substrate temperature. On the other hand, the 182 cm(-1) peak is dominant for In-rich films and stoichiometric films deposited at low substrate temperature. By comparing the Raman results with the X-ray diffraction measurements, the peak at 182 cm(-1) is found to be characteristic of CuInSe2 with a sphalerite structure.
引用
收藏
页码:L1394 / L1396
页数:3
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