The In2O3/CdTe interface: A possible contact for thin film solar cells?

被引：0
|
作者：
F. Rüggeberg
A. Klein
机构：
[1] Darmstadt University of Technology,Institute of Materials Science, Surface Science Division
来源：
Applied Physics A | 2006年 / 82卷
关键词：
Valence Band; Valence Band Maximum; Interface Formation; Valence Band Spectrum; Fermi Level Position;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transparent conductive In2O3 films were deposited by reactive evaporation of In and analyzed in-situ with photoelectron spectroscopy. The interface formation of In2O3 with evaporated CdTe has been investigated using the same technique. A valence band offset ΔEVB=2.1±0.1 eV is determined, resulting in a negligible conduction band offset. However, In2O3 will not provide an Ohmic contact to n-CdTe, due to the Fermi level position at the interface.
引用
收藏
页码：281 / 285
页数：4
相关论文
共 50 条
  • [41] In2O3 based perovskite solar cells
    Dong, Qi
    Liu, Fangzhou
    Wong, Man Kwong
    Djurisic, Aleksandra B.
    Ren, Zhiwei
    Shen, Qian
    Ng, Annie
    Surya, Charles
    Chan, Wai Kin
    OXIDE-BASED MATERIALS AND DEVICES VII, 2016, 9749
  • [42] Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells
    XuLin He
    JingQuan Zhang
    LiangHuan Feng
    LiLi Wu
    Wei Li
    GuangGen Zeng
    Zhi Lei
    Bing Li
    JiaGui Zheng
    Science China Technological Sciences, 2010, 53 : 2337 - 2341
  • [43] Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells
    HE XuLin
    Science China(Technological Sciences), 2010, (09) : 2337 - 2341
  • [44] First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells
    Du, Mao-Hua
    DEFECTS IN INORGANIC PHOTOVOLTAIC MATERIALS, 2010, 1268 : 71 - 76
  • [45] Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells
    HE XuLinZHANG JingQuanFENG LiangHuanWU LiLiLI WeiZENG GuangGenLEI ZhiLI Bing ZHENG JiaGui College of Materials Science and EngineeringSichuan UniversityChengdu China
    Science China(Technological Sciences), 2010, 53 (09) : 2337 - 2341
  • [46] ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells
    Amin, N
    Yamada, A
    Konagai, M
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 650 - 653
  • [47] Poly crystalline CdTe thin-film solar cells with complex back contact layers
    Qin, Wen-Zhi
    Zheng, Jia-Gui
    Li, Wei
    Cai, Wei
    Feng, Liang-Huan
    Cai, Ya-Ping
    Li, Bing
    Zhang, Jing-Quan
    Wu, Li-Li
    Xia, Geng-Pei
    Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, 2005, 11 (01): : 19 - 22
  • [48] Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells
    He XuLin
    Zhang JingQuan
    Feng LiangHuan
    Wu LiLi
    Li Wei
    Zeng GuangGen
    Lei Zhi
    Li Bing
    Zheng JiaGui
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (09) : 2337 - 2341
  • [49] Stable CdTe thin film solar cells with a MoOx back-contact buffer layer
    Yang, Ruilong
    Wang, Dezhao
    Jeng, Mingjer
    Ho, Kaiming
    Wang, Deliang
    PROGRESS IN PHOTOVOLTAICS, 2016, 24 (01): : 59 - 65
  • [50] Correction: An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review
    Suthar, Deepak
    Chuhadiya, Sakshi
    Sharma, Ritika
    Himanshu
    Dhaka, M. S.
    MATERIALS ADVANCES, 2022, 3 (24): : 9117 - 9118
12345