The In2O3/CdTe interface: A possible contact for thin film solar cells?

被引：0
|
作者：
F. Rüggeberg
A. Klein
机构：
[1] Darmstadt University of Technology,Institute of Materials Science, Surface Science Division
来源：
Applied Physics A | 2006年 / 82卷
关键词：
Valence Band; Valence Band Maximum; Interface Formation; Valence Band Spectrum; Fermi Level Position;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transparent conductive In2O3 films were deposited by reactive evaporation of In and analyzed in-situ with photoelectron spectroscopy. The interface formation of In2O3 with evaporated CdTe has been investigated using the same technique. A valence band offset ΔEVB=2.1±0.1 eV is determined, resulting in a negligible conduction band offset. However, In2O3 will not provide an Ohmic contact to n-CdTe, due to the Fermi level position at the interface.
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页码：281 / 285
页数：4
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