Resonant interaction of electrons with an rf electric field in asymmetric double-barrier structures

Analytical expressions for the electron wave functions, the low-signal, high-frequency conductance, and the widths of the energy levels (minibands) in a asymmetric double-barrier structure with thin barriers are obtained under conditions of coherent electron tunneling strictly along the centers of the energy levels and with the electron energies deviating from exact resonance. It is shown that an electron transmittance equal to 1 and a substantial increase in the integrated (taking into account the energy distribution of the electrons incident on the structure) rf conductance of the structure can be obtained by choosing the appropriate arrangement of the minibands of the structure relative to the conduction band bottom of the semiconductor materials to the left and right of the structure.