Mechanics of Defects in Dislocation-Free Silicon Single Crystals

被引：0
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作者：
N. A. Verezub
A.I. Prostomolotov
机构：
[1] Ishlinsky Institute for Problems in Mechanics RAS,
来源：
Mechanics of Solids | 2023年 / 58卷
关键词：
single crystal; silicon; Czochralski method; intrinsic point defect; recombination; microdefect; diffusion; simulation; thermal annealing;
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摘要：
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页码：383 / 403
页数：20
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