Correction to: Comparison from Simulated Al 0.3 Ga 0.7 As/GaAs/Ge and Al 0.3 Ga 0.7 As/GaAs/Si/Ge to Experimental InGaP/GaAs/InGaNAsSb/Ge for Optimized Utilization of the Solar Spectrum

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作者：
Hongxi Li
Yulin Tian
Ling Shen
Chusheng Liu
机构：
[1] China University of Mining and Technology,School of Mechanical and Electrical Engineering
[2] China University of Mining and Technology,School of Materials and Physics
来源：
Journal of Electronic Materials | 2022年 / 51卷
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页码：426 / 427
页数：1
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