Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure

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作者：
Kim, Dong Hyun [1 ]
Lee, Hee Chul [1 ]
机构：
[1] Korea Advanced Inst of Science and, Technology, Taejon, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 3 A期
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