Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

被引：0
|
作者：
V. I. Kadushkin
Yu. G. Sadof’ev
J. P. Bird
S. R. Johnson
Y. -H. Zhang
机构：
[1] Esenin State Pedagogical University,Department of Electrical Engineering and Center of Solid State Electronic Research
[2] Arizona State University,undefined
来源：
Semiconductors | 2007年 / 41卷
关键词：
72.20.My; 73.40.Kp; 73.63.Hs;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B)T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B)T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of ns ≈ 8 × 1011 cm−2.
引用
收藏
页码：327 / 334
页数：7
相关论文
共 50 条
12345