Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

被引:0
|
作者
V. I. Kadushkin
Yu. G. Sadof’ev
J. P. Bird
S. R. Johnson
Y. -H. Zhang
机构
[1] Esenin State Pedagogical University,Department of Electrical Engineering and Center of Solid State Electronic Research
[2] Arizona State University,undefined
来源
Semiconductors | 2007年 / 41卷
关键词
72.20.My; 73.40.Kp; 73.63.Hs;
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中图分类号
学科分类号
摘要
The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B)T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B)T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of ns ≈ 8 × 1011 cm−2.
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页码:327 / 334
页数:7
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