Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures

Heterostructures are prepared by the vacuum thermal evaporation of CdS〈In〉 onto heated p-CuInSe2 substrates. An In2O3 layer is deposited on the wide-gap component of each structure by magnetron sputtering. The photosensitivity of the heterostructures in ambient light and in linearly polarized radiation is investigated. The photosensitivity of higher-quality structures attains 80 mA/W at T=300 K. The heterostructures exhibit induced photopleochroism, and the laws governing its angular and spectral dependences are discussed. It is concluded that the prepared heterostructures have possible applications as narrowly selective photoanalyzers of linearly polarized radiation.