ON THE CDS/CUINSE2 CONDUCTION-BAND DISCONTINUITY

被引:144
|
作者
NIEMEGEERS, A
BURGELMAN, M
DEVOS, A
机构
[1] Department for Electronics, University of Ghent, Ghent
关键词
D O I
10.1063/1.115523
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recent calculations of the electron affinity difference between CdS and CuInSe2 indicate that the conduction band (CB) minimum of CuInSe is below the CB minimum of CdS. As a consequence, a spike occurs in the CB at the CdS/CuInSe2 interface. Such a spike is commonly considered as in conflict with good photovoltaic performance of heterojunction solar cells. It is outlined here that the simple assumption of thermionic emission across the junction can explain an unimpeded electron transport in the case of an n(+)p structure (n-type window, p-type absorber), even when a spike in the CB occurs. (C) 1995 American Institute of Physics.
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页码:843 / 845
页数:3
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