Conduction-band discontinuity of InAsP/InP heterojunction

被引：7

作者：

Anan, T ^{[1
]}

Nishi, K ^{[1
]}

Tomita, A ^{[1
]}

Tokutome, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 07期

关键词：

InAsP; InP; conduction-band discontinuity; band offset; LCAO;

D O I：

10.1143/JJAP.37.3915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band line-up of InAsP/lnP heterojunctions was investigated. The conduction-band discontinuity ratio Q(c) of strained InAsP alloys was determined by fitting the well thickness dependence of transition energies in InAsP quantum wells. This method does not require precise values of deformation potentials of InAsP, allowing mon reliable determination of the band offset. The obtained Q(c) value was 0.35, which is relatively small compared to previous reports. This value of the band offset is consistent with the predictions from the semi-empirical linear combination of atomic orbitals (LCAO) model.

引用

页码：3915 / 3918

页数：4

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