Laser-induced nanopatterning of silicon with colloidal monolayers

被引:0
|
作者
D. Brodoceanu
L. Landström
D. Bäuerle
机构
[1] Johannes-Kepler-Universität Linz,Institut für Angewandte Physik
[2] University of California,Russell S. Springer Chair
来源
Applied Physics A | 2007年 / 86卷
关键词
Regular Lattice; Hole Formation; Optical Penetration Depth; Bang Laboratory; Colloidal Monolayer;
D O I
暂无
中图分类号
学科分类号
摘要
A regular lattice of amorphous silica microspheres is used as a microlens system for laser-induced single-step fabrication of arrays of nanoholes on a (100) Si surface. With single-pulse 265.7-nm femtosecond-laser radiation, hole diameters of 57±6.5 nm at full width at half maximum and depths of 6±1 nm have been achieved.
引用
下载
收藏
页码:313 / 314
页数:1
相关论文
共 50 条
  • [21] LASER-INDUCED SURFACE DEFORMATIONS ON SILICON
    LUTHY, W
    AFFOLTER, K
    FUHRER, M
    PHYSICS LETTERS A, 1979, 72 (01) : 60 - 62
  • [22] Laser-induced formation of porous silicon
    Baranauskas, V.
    Thim, G.P.
    Peled, A.
    Applied Surface Science, 86 (01): : 398 - 404
  • [23] Laser-induced melting of porous silicon
    Timoshenko, V.Yu.
    Dittrich, Th.
    Sieber, I.
    Rappich, J.
    Kamenev, B.V.
    Kashkarov, P.K.
    Physica Status Solidi (A) Applied Research, 2000, 182 (01): : 325 - 330
  • [24] Laser-induced modification of porous silicon
    Sorokin, L. M.
    Sokolov, V. I.
    Burtsev, A. P.
    Kalmykov, A. E.
    Grigor'ev, L. V.
    TECHNICAL PHYSICS LETTERS, 2007, 33 (12) : 1065 - 1068
  • [25] LASER-INDUCED DEPOSITION OF SILICON FILMS
    HANABUSA, M
    MORIYAMA, S
    KIKUCHI, H
    THIN SOLID FILMS, 1983, 107 (03) : 227 - 234
  • [26] Laser-induced surface perturbations in silicon
    A. J. Pedraza
    S. Jesse
    Y. F. Guan
    J. D. Fowlkes
    Journal of Materials Research, 2001, 16 : 3599 - 3608
  • [27] LASER-INDUCED INFRARED ABSORPTION IN SILICON
    GAUSTER, WB
    BUSHNELL, JC
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3850 - &
  • [28] LASER-INDUCED REACTION OF MAGNESIUM WITH SILICON
    WITTMER, M
    LUTHY, W
    VONALLMEN, M
    PHYSICS LETTERS A, 1979, 75 (1-2) : 127 - 130
  • [29] ANNEALING OF LASER-INDUCED DEFECTS IN SILICON
    ANDRA, W
    BRYLOWSKA, I
    GOTZ, G
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 253 - 255
  • [30] LASER-INDUCED RESISTIVITY CHANGES IN SILICON
    RAO, DVG
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4853 - &