Growth and Properties of V-Doped HgSe Crystals

被引：0
|
作者：
S. Yu. Paranchich
Yu. S. Paranchich
V. N. Makogonenko
O. S. Romanyuk
M. D. Andriichuk
机构：
[1] Fed'kovich State University,
来源：
Inorganic Materials | 2001年 / 37卷
关键词：
Magnetic Field; Inorganic Chemistry; Vanadium; Conduction Band; Transport Property;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
HgSe〈V〉 crystals with a vanadium concentration ranging from 1024to 1026m–3were grown, and their transport properties were investigated between 77 and 400 K in magnetic fields of up to 12.73 kA/m. The effect of long-term annealing in Se vapor on the electron concentration and mobility in the crystals was studied. The n(NV), μ(T), and RH(T) data obtained before and after annealing suggest that the V dopant produces a resonance donor level in the conduction band of HgSe at EV≃ 0.250–0.260 eV.
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页码：556 / 559
页数：3
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