Growth of Fe-Doped and V-Doped MoS2 and Their Magnetic-Electrical Effects

Magnetism in two-dimensional(2D) materials has attracted much attention recently. However, intrinsic magnetic 2D materials are rare and mostly unstable in ambient. Although heteroatom doping can introduce magnetism, the basic property especially the electrical-magnetic coupling property has been rarely revealed. Herein,both iron(Fe)-doped and vanadium(V)-doped MoS2films were grown by chemical vapor deposition. Through studying the structure and electrical property of Fe-doped and V-doped MoS2, it was found that both Fe and V doping would decrease the electron concentration, exhibiting a p-type doping effect. Significantly, V-doped MoS2displays a p-type conduction behavior. Although the carrier mobility decreases after heteroatom doping, both Fe and V doping could endow MoS2with magnetism, in which the transfer curves of both MoS2transistors exhibit a strong magneticdependent behavior. It is found that the magnetic response of Fe-doped MoS2can be tuned from ～0.2 nA/T to～1.3 nA/T, with the tunability much larger than that of V-doped MoS2. At last, the magnetic mechanism is discussed with the local magnetic property performed by magnetic force microscopy. The typical morphology-independent magnetic signal demonstrates the formed magnetic domain structure in Fe-doped MoS2. This study opens new potential to design novel magnetic-electrical devices.