Synthesis and properties of CeN thin films deposited by arc ion plating

被引：0
|
作者：
S. Q. Xiao
K. Tsuzuki
H. Sugimura
O. Takai
机构：
[1] Nagoya University,Department of Materials Processing Engineering
来源：
Journal of Materials Science | 1998年 / 33卷
关键词：
Polymer; Magnetic Field; Thin Film; Crystal Structure; Nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce arc discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the arc discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm−3. This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 × 10−4 Ωcm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+.
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页码：3251 / 3254
页数：3
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