Deposition of carbon nitride thin films by arc ion plating

被引：7
|
作者：
Takai, O [1 ]
Taki, Y [1 ]
Kitagawa, T [1 ]
机构：
[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan
来源：
THIN SOLID FILMS | 1998年 / 317卷 / 1-2期
关键词：
nitride; carbon; ion plating;
D O I：
10.1016/S0040-6090(97)00628-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous carbon nitride thin films are deposited by cathodic are ion plating at the de current of 60 A and the nitrogen pressure of 1 Pa with various negative bias voltages. Structure, chemical composition and chemical bonding states are analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. The deposition rate and the N:C ratio change with bias voltage. The N:C ratio decreases with negative bias voltages. Application of negative bias on the substrate is effective to increase the film hardness. The maximum hardness is obtained at about -300 V. By this negative bias the three dimensional C-N bonding develops and the film becomes hard. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：380 / 383
页数：4
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