Electron field emission from thin films of amorphous carbon nitride synthesized by arc ion plating

被引：5
|
作者：
Sugimura, H [1 ]
Sato, Y [1 ]
Ando, Y [1 ]
Tajima, N [1 ]
Takai, O [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Nagoya, Aichi 4648603, Japan
来源：
THIN SOLID FILMS | 2002年 / 407卷 / 1-2期
关键词：
electron field emission; amorphous carbon nitride; arc ion plating;
D O I：
10.1016/S0040-6090(02)00020-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Field emission characteristics of amorphous carbon nitride (a-C:N) thin films were studied in the applied Field strength range of up to 20 V/mum by comparing the characteristics of amorphous carbon (a-C) thin films. Both a-C:N and a-C films were deposited on Si substrates by means of shielded arc ion plating (SAIP) using nitrogen or argon as an operating gas, respectively, and graphite as a solid carbon source. The a-C:N films showed better field emission current densities than the a-C films. Nitrogen doping to a-C was found to be effective in order to improve the field emission characteristics. Among all of the fabricated a-C:N films, the film containing 23% nitrogen, prepared using a nitrogen arc plasma at a pressure of 1 Pa by applying a sample bias voltage of -100 V, showed the lowest threshold field and the highest emission current density. Furthermore, thickness of this a-C:N was optimized to be approximately 40 nm in order to obtain the best field emission characteristics, that is, a threshold field of 12 V/mum and an emission current density of 3.6 muA/cm(2) at a field of 20 V/mum. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：104 / 108
页数：5
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