Correction to: Synthesis and Characterization of Plasma-Polymer Gate Dielectric Films for Graphene Field Effect Transistor Devices

被引：0
|
作者：
Hyeon Jin Seo
Yeong Eun Gil
Ki-Hwan Hwang
Antony Ananth
Jin-Hyo Boo
机构：
[1] Sungkyunkwan University,Department of Chemistry
[2] Sungkyunkwan University,Institute of Basic Science
来源：
Electronic Materials Letters | 2019年 / 15卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The original version of this article unfortunately contains a mistake. Two numbers in the acknowledgement section are incorrect. The correct acknowledgements are as follows:
引用
收藏
页码：663 / 663
相关论文
共 50 条
  • [21] The gate leakage current in graphene field-effect transistor
    Mao, Ling-Feng
    Li, Xijun
    Wang, Zi-Ou
    Wang, Jin-Yan
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) : 1047 - 1049
  • [22] A novel field effect transistor with dielectric polymer gel
    Kosemen, Arif
    San, Sait Eren
    Okutan, Mustafa
    Dogruyol, Zekeriya
    Demir, Ahmet
    Yerli, Yusuf
    Sengez, Busra
    Basaran, Engin
    Yilmaz, Faruk
    MICROELECTRONIC ENGINEERING, 2011, 88 (01) : 17 - 20
  • [23] Graphene field effect transistors with parylene gate dielectric
    Sabri, S. S.
    Levesque, P. L.
    Aguirre, C. M.
    Guillemette, J.
    Martel, R.
    Szkopek, T.
    APPLIED PHYSICS LETTERS, 2009, 95 (24)
  • [24] Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics
    Habibpour, Omid
    Cherednichenko, Sergey
    Vukusic, Josip
    Stake, Jan
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 871 - 873
  • [25] Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric
    Panzer, MJ
    Newman, CR
    Frisbie, CD
    APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
  • [26] Performance Characterization of Schottky Tunneling Graphene Field Effect Transistor at 60 nm Gate Length
    Abidin, Noor Faizah Zainul
    Ahmad, Ibrahim
    Ker, Pin Jern
    Menon, P. Susthitha
    SAINS MALAYSIANA, 2017, 46 (07): : 1089 - 1095
  • [27] A NEW POLYMER INSULATED GATE FIELD-EFFECT TRANSISTOR
    AKTIK, M
    SEGUI, Y
    AI, B
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 5055 - 5057
  • [28] Fabrication and characterization of a pentacene thin film transistor with a polymer insulator as a gate dielectric
    Lee, Chulwoo
    Ko, Jungmin
    Lee, Junyoung
    Chung, Ilsub
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 710 - 715
  • [29] Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications
    Ulrich, MD
    Rowe, JE
    Niu, D
    Parsons, GN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1792 - 1797
  • [30] Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon Field-Effect Transistor
    Adeleh Hashemi
    Ali Bahari
    Shahram Ghasemi
    Journal of Electronic Materials, 2018, 47 : 3717 - 3726
12345