Low-resistance Ti/Al ohmic contact on undoped ZnO

被引：45
|
作者：
Kim S.Y. [1 ]
Jang H.W. [1 ]
Kim J.K. [1 ]
Jeon C.M. [1 ]
Park W.I. [1 ]
Yi G.-C. [1 ]
Lee J.-L. [1 ]
机构：
[1] Dept. of Materials Science and Eng., Pohang Univ. of Sci. and Technology, Pohang
来源：
Journal of Electronic Materials | 2002年 / 31卷 / 8期
关键词：
Ohmic contact; Photoemission spectroscopy; ZnO;
D O I：
10.1007/s11664-002-0197-1
中图分类号：
学科分类号：
摘要：
We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 × 10-7 Ωcm2, was obtained from the Ti (300 Å)/Al (3,000 Å) contact annealed at 300°C. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300°C. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.
引用
收藏
页码：868 / 871
页数：3
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