Low-resistance Ti/Al ohmic contact on undoped ZnO

被引：45

作者：

Kim S.Y. ^{[1
]}

Jang H.W. ^{[1
]}

Kim J.K. ^{[1
]}

Jeon C.M. ^{[1
]}

Park W.I. ^{[1
]}

Yi G.-C. ^{[1
]}

Lee J.-L. ^{[1
]}

机构：

[1] Dept. of Materials Science and Eng., Pohang Univ. of Sci. and Technology, Pohang

来源：

Journal of Electronic Materials | 2002年 / 31卷 / 8期

关键词：

Ohmic contact; Photoemission spectroscopy; ZnO;

D O I：

10.1007/s11664-002-0197-1

中图分类号：

学科分类号：

摘要：

We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 × 10-7 Ωcm2, was obtained from the Ti (300 Å)/Al (3,000 Å) contact annealed at 300°C. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300°C. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.

引用

页码：868 / 871

页数：3

共 50 条

[41] LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs.
Hirano, Makoto
Yanagawa, Fumihiko
1600, (25):
[42] Formation and effect of thermal annealing for low-resistance Ni/Au ohmic contact to phosphorous-doped p-type ZnO
Lim, JH
Kim, KK
Hwang, DK
Kim, HS
Oh, JY
Park, SJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (03) : G179 - G181
[43] LOW-RESISTANCE OHMIC CONTACTS TO ZINC SELENIDE.
Tyagi, M.S.
Journal of the Institution of Electronics and Telecommunication Engineers, 1979, 25 (12): : 491 - 494
[44] LOW-RESISTANCE OHMIC CONTACTS TO P-INP
CHENG, CL
COLDREN, LA
MILLER, BI
RENTSCHLER, JA
SHEN, CC
ELECTRONICS LETTERS, 1982, 18 (17) : 755 - 756
[45] EXTREMELY LOW-RESISTANCE AU/MN/NI/AU OHMIC CONTACT TO P-GAAS
THIERY, JF
FAWAZ, H
LEROY, A
SALMER, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05): : 2130 - 2133
[46] LOW-RESISTANCE OHMIC CONTACTS TO PARA-GAAS
HIRANO, M
YANAGAWA, F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (08): : 1268 - 1269
[47] FORMATION OF EXTREMELY LOW-RESISTANCE TI/PT/AU OHMIC CONTACTS TO P-GAAS
STAREEV, G
APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2801 - 2803
[48] Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN
Kim, Han-Ki
Yi, Min-Su
Lee, Sung-Nam
THIN SOLID FILMS, 2009, 517 (14) : 4039 - 4042
[49] Low-resistance TiAl 3 /Au ohmic contact and enhanced performance on AlGaN/GaN HEMT
Xu, Te
Zhang, Jizhou
Yang, Zhen
Wang, Jiangwen
Li, Qiurui
Zhang, Yufei
Hu, Weiguo
Zhai, Junyi
APPLIED SURFACE SCIENCE, 2024, 664
[50] PT/TI/P-IN0.53GA0.47AS LOW-RESISTANCE NONALLOYED OHMIC CONTACT FORMED BY RAPID THERMAL-PROCESSING
KATZ, A
DAUTREMONTSMITH, WC
CHU, SNG
THOMAS, PM
KOSZI, LA
LEE, JW
RIGGS, VG
BROWN, RL
NAPHOLTZ, SG
ZILKO, JL
LAHAV, A
APPLIED PHYSICS LETTERS, 1989, 54 (23) : 2306 - 2308

← 1 2 3 4 5 →