Luminescent and structural properties of ZnO-Ag films

被引:0
|
作者
V. S. Khomchenko
V. I. Kushnirenko
V. P. Papusha
A. K. Savin
O. S. Lytvyn
机构
[1] National Academy of Sciences of Ukraine,V.E. Lashkaryov Institute of Semiconductor Physics
来源
Semiconductors | 2010年 / 44卷
关键词
Sapphire Substrate; Gaussian Component; Emission Center; Electron Beam Current; Atomic Layer Epitaxy;
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中图分类号
学科分类号
摘要
ZnO-Ag thin films were prepared by a two-stage method on glass and sapphire substrates. Ag doping was carried out by a method of close space sublimation at atmospheric pressure. The film thickness is varied from 0.6 to 7 μm. The structural and radiative properties were explored by X-ray diffraction technique, atomic force microscopy, photoluminescence and cathodoluminescence spectroscopy. The influence of the fabricating conditions on the properties of ZnO-Ag films is studied. It is found that the Ag doping modifies the crystalline structure of the films and promotes the oriented growth of monocrystalline blocks with the size of 500–2000 nm in the [0002] direction. Improvement of the crystalline quality correlates with the change of the radiative characteristics of the films. The origin of emission centers is discussed.
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页码:685 / 690
页数:5
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