Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperature

被引：0
|
作者：
C. K. Kim
J. H. Lee
Y. H. Lee
N. I. Cho
D. J. Kim
W. P. Kang
机构：
[1] Soonchunhyang University,Department of Electrical Engineering
[2] Sun Moon University,Department of Electronic Engineering
[3] Seoul National University,Department of Inorganic Materials Engineering
[4] Vanderbilt University,Department of Electrical and Computer Engineering
来源：
Journal of Electronic Materials | 1999年 / 28卷
关键词：
Adsorption; gas sensor; hydrogen; Pd; Schottky diode; SiC;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was fabricated. Hydrogen-sensing behaviors of Pd-SiC Schottky diode have been analyzed as a function of hydrogen concentration and temperature by current-voltage (I-V) and ΔI-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.
引用
收藏
页码：202 / 205
页数：3
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