Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs

被引：38
|
作者：
Weichsel, C [1 ]
Pagni, O [1 ]
Leitch, AWR [1 ]
机构：
[1] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South Africa
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期
关键词：
D O I：
10.1088/0268-1242/20/8/036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage measurements were used to study the electrical and hydrogen sensing characteristics of Pd Schottky contacts fabricated on ZnO. The ZnO films were grown on doped GaAs by MOCVD. By utilizing the GaAs substrate as a low resistance contact to the ZnO film, a remarkably low series resistance of the diodes was achieved. After exposure of the Schottky diodes to a hydrogen ambient, the current at reverse bias increased, indicating the sensitivity to hydrogen gas. In contrast to previous reports, the contacts are able to recover fully at room temperature. Annealing studies in hydrogen ambient show stability of these contacts up to temperatures of 150 degrees C.
引用
收藏
页码：840 / 843
页数：4
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