Misfit dislocations and stress in In1 − xGaxAs/GaAs heterostructures

被引：0
|
作者：
I. V. Kurilo
S. K. Guba
机构：
[1] Lviv Polytechnic National University,
来源：
Inorganic Materials | 2011年 / 47卷
关键词：
GaAs; Misfit Dislocation; Thermal Expansion Mismatch; Solid Source Molecular Beam Epitaxy; Critical Film Thickness;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have estimated the elastic properties of In1 − xGaxAs/GaAs heterostructures and the characteristics of misfit dislocations in such heterostructures: misfit dislocation spacing, Burgers vector length in various interfaces, surface density of dangling bonds, film/substrate interface energy, critical film thickness below which pseudomorphic growth is possible without misfit dislocations, elastic strain energy of the film-substrate system, average elastic strain of a thin-film island as a function of its radius, thermal stresses induced by the thermal-expansion and lattice mismatches between the layers in contact, and crack length in the film.
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收藏
页码：819 / 823
页数：4
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