Misfit dislocations and stress in In1 − xGaxAs/GaAs heterostructures

被引：0

作者：

I. V. Kurilo

S. K. Guba

机构：

[1] Lviv Polytechnic National University,

来源：

Inorganic Materials | 2011年 / 47卷

关键词：

GaAs; Misfit Dislocation; Thermal Expansion Mismatch; Solid Source Molecular Beam Epitaxy; Critical Film Thickness;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have estimated the elastic properties of In1 − xGaxAs/GaAs heterostructures and the characteristics of misfit dislocations in such heterostructures: misfit dislocation spacing, Burgers vector length in various interfaces, surface density of dangling bonds, film/substrate interface energy, critical film thickness below which pseudomorphic growth is possible without misfit dislocations, elastic strain energy of the film-substrate system, average elastic strain of a thin-film island as a function of its radius, thermal stresses induced by the thermal-expansion and lattice mismatches between the layers in contact, and crack length in the film.

引用

页码：819 / 823

页数：4

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[1] Misfit dislocations and stress in In1-xGaxAs/GaAs heterostructures
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