'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53–1.55 μm) laser diodes

被引：0
|
作者：
A. Paraskevopoulos
H.-J. Hensel
S. Schelhase
J. Frahm
J. Kübler
A. Denker
A. Gubenko
E.L. Portnoi
机构：
[1] Heinrich-Hertz-Institut für Nachrichtentechnik-Berlin,A.F. Ioffe Physico
[2] Advanced Photonic Systems GmbH,Techn. Institute
[3] Hahn Meitner Institut Berlin,undefined
[4] Russian Academy of Sciences,undefined
来源：
Optical and Quantum Electronics | 2001年 / 33卷
关键词：
on-wafer surface implantation; picosecond pulse lasers;
D O I：
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学科分类号：
摘要：
A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing for a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.5 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA's.
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页码：745 / 750
页数：5
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