1.55 μm InP/InGaAsP/InP laser wafer prepared by different temperature growth

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作者：
Li, Xuechun [1 ]
Hu, Lizhong [1 ]
Sai, Na [1 ]
Yan, Zhiming [1 ]
机构：
[1] Dalian Univ of Technology, Dalian, China
来源：
Dalian Ligong Daxue Xuebao/Journal of Dalian University of Technology | 1998年 / 38卷 / 03期
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页码：270 / 272
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