Nonequilibrium Spin Fluctuations in Nonmagnetic Single-Electron Transistors and Quantum Dots

被引：0
|
作者：
J. Martinek
J. Barnaś
G. Schön
S. Takahashi
S. Maekawa
机构：
[1] Universität Karlsruhe,Institut für Theoretische Festkörperphysik
[2] Tohoku University,Institute for Materials Research
[3] Polish Academy of Sciences,Institute of Molecular Physics
[4] Adam Mickiewicz University,Department of Physics
[5] Institut für Nanotechnologie,Forschungszentrum Karlsruhe
来源：
Journal of Superconductivity | 2003年 / 16卷
关键词：
spin fluctuations; SET; quantum dot; spin-flip relaxation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that nonequilibrium spin fluctuations significantly influence electronic transport in a single-electron transistor, when the spin relaxation on the island is slow. To describe spin fluctuations, the “orthodox” tunneling theory is generalized by taking into account the electron spin. It is shown that the transition between consecutive charge states can occur via high-spin states, which significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures.
引用
收藏
页码：343 / 346
页数：3
相关论文
共 50 条
  • [21] Spin accumulation and magnetotransport in NiFeAlNiFe single-electron transistors
    Department of Physics, National Taiwan University, Taipei 106, Taiwan
    不详
    不详
    [J]. Journal of Applied Physics, 2008, 103 (07):
  • [22] Noncollinear single-electron spin-valve transistors
    Wetzels, W
    Bauer, GEW
    Grifoni, M
    [J]. PHYSICAL REVIEW B, 2005, 72 (02):
  • [23] Measurements of Kondo and spin splitting in single-electron transistors
    Kogan, A
    Amasha, S
    Goldhaber-Gordon, D
    Granger, G
    Kastner, MA
    Shtrikman, H
    [J]. PHYSICAL REVIEW LETTERS, 2004, 93 (16) : 166602 - 1
  • [24] Single-electron transistors
    Hadley, P
    Lientschnig, G
    Lai, MJ
    [J]. COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 125 - 132
  • [25] Single-electron transistors for infrared wavelength quantum communications
    Kuo, DMT
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (12B): : L1607 - L1610
  • [26] Single-electron transistors
    Devoret, M
    Glattli, C
    [J]. PHYSICS WORLD, 1998, 11 (09) : 29 - 33
  • [27] Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
    Wolf, Conrad R.
    Thonke, Klaus
    Sauer, Rolf
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (14)
  • [28] Silicon single-electron transistors and single-electron CCD
    Takahashi, Y
    Fujiwara, A
    Ono, Y
    Inokawa, H
    [J]. MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 181 - 191
  • [29] Quantum charge fluctuations and the polarizability of the single-electron box
    Lehnert, KW
    Turek, BA
    Bladh, K
    Spietz, LF
    Gunnarsson, D
    Delsing, P
    Schoelkopf, RJ
    [J]. PHYSICAL REVIEW LETTERS, 2003, 91 (10)
  • [30] Single-electron quantum dots in silicon MOS structures
    Khoury, M
    Gunther, A
    Milicic, S
    Rack, J
    Goodnick, SM
    Vasileska, D
    Thornton, TJ
    Ferry, DK
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (04): : 415 - 421
12345