An improved theoretical model of the dc characteristics of metal-semiconductor field effect transistors

被引：0
|
作者：
P. Chattopadhyay
J. Pal
机构：
[1] Department of Electronic Science,
[2] University College of Science,undefined
[3] 92,undefined
[4] A.P.C. Road,undefined
[5] Calcutta-700 009,undefined
[6] India,undefined
来源：
Applied Physics A | 1998年 / 67卷
关键词：
PACS: 73.20; 73.30+y; 73.40.Qv;
D O I：
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学科分类号：
摘要：
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页码：563 / 565
页数：2
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