Memristor-Based Low-Power High-Speed Nonvolatile Hybrid Memory Array Design

被引：0
|
作者：
Khandoker Asif Faruque
Baishakhi Rani Biswas
A. B. M. Harun-ur Rashid
机构：
[1] Bangladesh University of Engineering and Technology,
来源：
Circuits, Systems, and Signal Processing | 2017年 / 36卷
关键词：
Memristor; Transmission gate; Nonvolatile; High speed; Low power;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, a memristor–transistor hybrid architecture-based nonvolatile memory array design approach has been proposed. Here, a single memory cell consists of a memristor and one transmission gate, whereas a conventional SRAM cell consists of six transistors. This proposed design has the advantage of being nonvolatile, having high switching speed and low power requirement. The proposed cell shows better performance in comparison with other published memristor–transistor hybrid memory cell.
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页码：3585 / 3597
页数：12
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